Superlinear dependence of photon drag voltage on incident power density
- 15 February 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (4), 119-120
- https://doi.org/10.1063/1.1654579
Abstract
The photon drag effect in semiconductors has been studied over a wide range of light intensities. The experiment was carried out on p‐type germanium samples by means of a TEA CO2 laser at 10.6 μm with a peak power of 1.2 MW. The superlinear dependence of photon drag voltage on incident power density was observed at room temperature for a sample of 2.6‐Ω cm resistivity.Keywords
This publication has 3 references indexed in Scilit:
- The photon drag tensor in p-type germaniumJournal of Physics C: Solid State Physics, 1971
- Sign reversal of the photon drag effect in p type germaniumJournal of Physics C: Solid State Physics, 1971
- PHOTON DRAG IN GERMANIUMApplied Physics Letters, 1970