Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (24), 2050-2052
- https://doi.org/10.1049/el:19971363
Abstract
SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300 Hz. The measured KB-factor of 2.6 × 10–10 µm2s is the lowest of any previously reported HBT. With an f⊤ of 40 GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10 GHz microstrip resonator showed –100 dBc at 100 kHz off carrier.Keywords
This publication has 3 references indexed in Scilit:
- Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Low-frequency noise in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1995
- SiGe-HBTs with high fT at moderate current densitiesElectronics Letters, 1994