Interpretation of dissociative-electron attachment processes for silicon tetrachloride

Abstract

Appearance potentials and translational energies of the products resulting from several dissociative‐electron capture processes have been measured. Hypothetical potential surfaces for ${\mathrm{SiCl}}_4^{-}$ compound states and the possible dissociated products have been shown. The heat of formation of SiCl₃(g) has been determined.