Chapter 9 Silicon Carbide Junction Devices
- 1 January 1971
- book chapter
- Published by Elsevier
- Vol. 7, 625-683
- https://doi.org/10.1016/s0080-8784(08)62941-5
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- News itemsMaterials Research Bulletin, 1969
- Refinement of the structure of Li2TiO3Materials Research Bulletin, 1969
- Detection of ultraviolet radiation using silicon carbide p-n junctionsSolid-State Electronics, 1967
- Diffusion of nitrogen into silicon carbide single crystals doped with aluminumSolid-State Electronics, 1966
- Growth Studies of Silicon Carbide CrystalsJournal of the Electrochemical Society, 1966
- Epitaxial Growth of Silicon Carbide by the Thermal Reduction TechniqueJournal of the Electrochemical Society, 1966
- Exciton Complexes and Donor Sites inSiCPhysical Review B, 1965
- Optical Properties ofSiC: Absorption and LuminescencePhysical Review B, 1965
- Chemical Etching of Silicon Carbide with HydrogenJournal of the Electrochemical Society, 1965
- Electrical Contacts to Silicon CarbideJournal of Applied Physics, 1958