Efficient sprayed In2O3 : Sn n-type silicon heterojunction solar cell
- 1 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7), 459-462
- https://doi.org/10.1063/1.89741
Abstract
We present results concerning In2O3 (tin‐doped) n‐type siliconheterojunctionsolar cell. The transparent and conductive In2O3 : Sn layer was made using a very simple, cheap, and quick method. Conversion efficiency up to 10% is reported. Typical parameters under AM1 simulated sunlight are open‐circuit photovoltage V oc=500 mV, short‐circuit photocurrentI sc=32 mA cm−2, and fill factors around 0.6–0.65.Keywords
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