A monolithic zinc-oxide-on-silicon convolver
- 15 August 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (4), 188-190
- https://doi.org/10.1063/1.1655433
Abstract
A monolithic convolver using rf‐sputtered zinc oxide deposited on silicon was constructed and operated at a center frequency of 120 MHz. The electronic efficiency obtained with this device F = Pout/Pin1Pin2, using 100‐Ω cm silicon, was −70 dB m. This corresponds to an input‐output efficiency of approximately −50 dB with a 20‐dB m reference signal. These results agreed well with our theoretical expectations for the device. The theory predicts that with a properly optimized device, the electronic efficiency F can be of the order of −50 dB m.Keywords
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