Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon

Abstract

Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.