Effect of free-carrier screening on the ultrafast relaxation kinetics in hot polar semiconductors
- 15 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (4), 2388-2392
- https://doi.org/10.1103/physrevb.32.2388
Abstract
The effect of free-carrier screening on the kinetics of evolution of relaxation processes in non- equilibrium photoexcited plasma in polar semiconductors is investigated. We compare numerical results obtained for GaAs under three different assumptions: neglecting screening effects, using a screening factor in the Debye-Hückel approximation, and introducing screening effects by means of a dielectric function calculated in the random-phase approximation.Keywords
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