Effects of implant annealing on the power conversion efficiency of vertical cavity top-surface emitting lasers
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxyApplied Physics Letters, 1993
- Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μmElectronics Letters, 1990