Effective Mass Approximation for Acceptor States in Silicon
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 31 (1), 59-69
- https://doi.org/10.1002/pssb.19690310108
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- Internal Impurity Levels in Semiconductors: Experiments in-Type SiliconPhysical Review Letters, 1960
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955
- Theory of Donor and Acceptor States in Silicon and GermaniumPhysical Review B, 1954