p-channel, strained quantum well, field-effect transistor
- 25 August 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (8), 461-463
- https://doi.org/10.1063/1.97116
Abstract
A p‐channel field‐effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation‐doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well‐behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas measurements prove the existence of a two‐dimensional hole gas with a strain‐shifted light‐hole ground state associated with a light‐hole mass of 0.154m0.Keywords
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