Correlation between photoluminescence and infrared absorption spectra of oxidized nanoscale silicon clusters
- 1 March 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (5), 2815-2819
- https://doi.org/10.1063/1.367041
Abstract
We report in situphotoluminescence and ex situFourier transforminfrared spectra of nanoscale siliconclusters exposed to atomic hydrogen, molecular oxygen, and humidified argon. Comparisons between infrared absorption spectra of fresh and aged samples indicate that photoluminescence efficiency is correlated with a stoichiometric oxide shell and the presence of Si dangling bond passivants at the core/oxide interface.Photoluminescence quenching is demonstrated in efficiently luminescing samples upon exposure to atomic hydrogen with recovery of photoluminescence occurring upon subsequent exposure to air. The photoluminescence quenching and recovery is correlated with a partial quenching and recovery of absorption due to interfacial silane groups. The correlations between photoluminescence and infrared absorption spectra, together with the hydrogen quenching results, provide evidence that radiative recombination in these samples is associated with interfacial oxide-related defects.Keywords
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