THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GaAs LASERS
- 1 November 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (9), 162-163
- https://doi.org/10.1063/1.1753914
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effect of Pressure on the Spontaneous and Stimulated Emission from GaAsPhysical Review B, 1963
- Line Widths and Pressure Shifts in Mode Structure of Stimulated Emission from GaAs JunctionsIBM Journal of Research and Development, 1963
- Threshold Relations and Diffraction Loss for Injection LasersIBM Journal of Research and Development, 1963