Tunneling effective mass in hydrogenated amorphous silicon

Abstract

The tunneling effective mass of electrons in undoped a‐Si:H has been determined from measurements on Schottky diodes operating with high reverse fields. Under these conditions, the change of current with electric field is a sensitive function of effective mass. The tunneling effective mass was measured to be 0.09±0.02 m_e for a range of different samples giving a tunneling constant of ≊40 Å.