New experimental evidence for minority-carrier MIS diodes

Abstract

Measurements of short‐circuit density J_sc and open‐circuit photovoltage V_oc have been made over a range of illumination levels at various temperatures for Al‐SiO_x‐pSi MIS photodiodes. It is found that at high illumination levels the data satisfy the relation J_sc=J₀ exp(qV_oc/kT), where J₀ is a temperature‐dependent constant. By examining the variation of J₀ with temperature it is conclusively demonstrated that the dark current in these diodes is dominated by minority‐carrier flow, confirming recent theoretical predictions.