Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and Germanium
- 1 January 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (1), 30-39
- https://doi.org/10.1143/jpsj.19.30
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Low temperature, mm-wave cyclotron resonance relaxation times in siliconPhysics Letters, 1963
- Cyclotron Resonance Line Broadening Due to Carrier-Carrier InteractionPhysical Review Letters, 1963
- Anisotropic phonon scattering of electrons in germaniumPhysics Letters, 1962
- Millimeter Cyclotron Resonance in SiliconPhysical Review Letters, 1960
- Theory of Cyclotron Resonance Absorption in Many-Valley SemiconductorsPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Plasma Resonance in Crystals: Observations and TheoryPhysical Review B, 1955
- Conductivity and Hall Effect in the Intrinsic Range of GermaniumPhysical Review B, 1954
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950
- The Scattering of Electrons by Hydrogen AtomsPhysical Review B, 1950