Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (2), 262-269
- https://doi.org/10.1109/16.69904
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Formation of silicided, ultra-shallow junctions using low thermal budget processingJournal of Electronic Materials, 1990
- Phase transformations induced by rapid thermal annealing in Ti–Si and W–Si alloysJournal of Vacuum Science & Technology A, 1989
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- Source—Drain contact resistance in CMOS with self-aligned TiSi2IEEE Transactions on Electron Devices, 1987
- High Temperature Process Limitation on TiSi2Journal of the Electrochemical Society, 1986
- Titanium Silicide Formation on Boron‐Implanted SiliconJournal of the Electrochemical Society, 1985
- Formation of thin films of CoSi2: Nucleation and diffusion mechanismsThin Solid Films, 1985
- Study of cobalt-disilicide formation from cobalt monosilicideJournal of Applied Physics, 1985
- First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of OxygenMRS Proceedings, 1985
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975