Semiconducting Diamonds by Ion Bombardment
- 1 March 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 137 (5A), A1614-A1616
- https://doi.org/10.1103/physrev.137.a1614
Abstract
Both natural and synthetic diamond crystals acquire altered surface layers as the result of ionic bombardment in a glow discharge at potentials of 1500-2800 V. The surface layers have a gray-brown color, and electron diffraction patterns of them indicate that they are somewhat amorphous. The surface layers are found to be electrical semiconductors. The kinds of gas ions used for bombardment apparently determine whether the conductivity is predominantly type or type. The activation energies for conduction range between 0.024 and 0.20 eV. The surface layers are partly destroyed by heating in air to about 400°C.
Keywords
This publication has 12 references indexed in Scilit:
- Low-energy electron diffraction studies of (100) and (111) surfaces of semiconducting diamondSurface Science, 1964
- Nitrogen-14 in Natural DiamondsNature, 1962
- Diamonds Containing Controllable Impurity ConcentrationsNature, 1962
- Preparation of Semiconducting DiamondsThe Journal of Chemical Physics, 1962
- Preparation of DiamondNature, 1959
- Nitrogen, A Major Impurity in Common Type I DiamondPhysical Review B, 1959
- Electrical and Optical Properties of Type IIb DiamondsProceedings of the Physical Society. Section B, 1957
- Electrical and Optical Properties of a Semiconducting DiamondProceedings of the Physical Society. Section B, 1956
- Preliminary Study of the Electrical Properties of a Semiconducting DiamondPhysical Review B, 1955
- Unusual phosphorescence of a diamondPhysica, 1952