Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C
- 1 January 1969
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 1 (1), 71-73
- https://doi.org/10.1080/00337576908234463
Abstract
High substitutional components have been observed in Bi and TI implants in silicon without any annealing treatment. Implant conditions were ∼1013 ions/cm2 at 40keV and 25 °C. The lattice location of the implanted atoms has been determined by means of the “channeling” technique.Keywords
This publication has 5 references indexed in Scilit:
- Substitutional doping during ion implantationSolid-State Electronics, 1968
- EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION-IMPLANTED SILICONApplied Physics Letters, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967