Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C
- 1 January 1969
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 1 (1), 71-73
- https://doi.org/10.1080/00337576908234463
Abstract
High substitutional components have been observed in Bi and TI implants in silicon without any annealing treatment. Implant conditions were ∼1013 ions/cm2 at 40keV and 25 °C. The lattice location of the implanted atoms has been determined by means of the “channeling” technique.Keywords
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