Crystal orientation dependence of residual disorder in As−implanted Si

Abstract

MeV ⁴He⁺ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall effect measurements were employed to study the orientation dependence of the amount of damage remaining after anneal of 200−keV As−implanted Si. The residual disorder after high−temperature annealing was found to depend upon the crystal orientation. For 〈111〉−oriented Si, anomalously high residual disorder was found in the dose region of 10¹⁵/cm² by both the TEM and channeling measurements. Significantly less disorder was found in 〈100〉− and 〈110〉−oriented Si, the latter exhibiting essentially no residual disorder. The electrical activity of the implanted layer was consistent with the orientation dependence observed.