Functionalization of GaAs Surfaces with Aromatic Self-Assembled Monolayers: A Synchrotron-Based Spectroscopic Study
- 10 May 2003
- journal article
- Published by American Chemical Society (ACS) in Langmuir
- Vol. 19 (12), 4992-4998
- https://doi.org/10.1021/la020909q
Abstract
No abstract availableThis publication has 66 references indexed in Scilit:
- Generation of Surface Amino Groups on Aromatic Self-Assembled Monolayers by Low Energy Electron Beams—A First Step Towards Chemical LithographyAdvanced Materials, 2000
- Formation and Structure of Self-Assembled MonolayersChemical Reviews, 1996
- Self-Assembly of Conjugated Molecular Rods: A High-Resolution STM StudyJournal of the American Chemical Society, 1996
- Fabrication of in-plane-gate transistor structures by focused laser beam-induced Zn doping of modulation-doped GaAs/AlGaAs quantum wellsApplied Physics Letters, 1994
- X-ray absorption spectra of poly-p-phenylenes and polyacenes: localization of π orbitalsPhysica Scripta, 1990
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103Atomic Data and Nuclear Data Tables, 1985
- Photoelectrochemical passivation of GaAs surfacesJournal of Vacuum Science & Technology B, 1983
- Photoionization cross sections and photoelectron angular distributions for x-ray line energies in the range 0.132–4.509 keV targets: 1 ≤ Z ≤ 100Atomic Data and Nuclear Data Tables, 1979
- The probing depth in photoemission and auger-electron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- A detailed refinement of the crystal and molecular structure of anthraceneActa Crystallographica, 1956