Far-Infrared Absorption in-Type Silicon Due to Photon-Induced Hopping
- 18 October 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 15 (16), 664-667
- https://doi.org/10.1103/physrevlett.15.664
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.15.664Keywords
This publication has 8 references indexed in Scilit:
- Theory of Absorption of Electromagnetic Radiation by Hopping in-Type Silicon and GermaniumPhysical Review B, 1964
- Signal-to-Noise Ratios in Multiplex and Scanning SpectrometersApplied Optics, 1964
- Microwave Absorption in Silicon at Low TemperaturesPhysical Review B, 1964
- Approximations for the ac Impurity Hopping ConductionPhysical Review B, 1964
- Impurity Conduction in-Type Silicon at Microwave FrequenciesPhysical Review B, 1963
- Polarization Conductivity in-Type GermaniumPhysical Review B, 1963
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960