Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO2 Interfaces–
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5), 909-915
- https://doi.org/10.1143/jjap.20.909
Abstract
An attempt is made to explain the electron mobility of silicon MOSFETs in low electron desities at low temperatures by taking account of the phenomenological change in the electrostatic screening due to smearing of the two-dimensional subband tail. The results of application of this approach to various samples are satisfactory for characterizing the electrical properties of Si-SiO2 interfaces in silicon MOS devices.Keywords
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