Lattice imaging of faulted dipoles in silicon
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 39 (1), 59-63
- https://doi.org/10.1080/01418617908239275
Abstract
A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon.Keywords
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