Dopan profile changes induced by pulsed‐laser annealing of B, P, As, Fe, and Cu implanted silicon have been measured by secondary ion mass spectrometry and Rutherford ion backscattering and have been analyzed with thermal and mass diffusion calculations. The results show that these profile changes are consistent with near‐surface melting and liquid‐phase recrystallization. Fitted valus of diffusion coefficients for B, P, and As in liquid silicon agree quite well with those reported in the literature. Segregation of Fe and Cu to the surface during laser annealing has also been explained with a model calculation.