Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12A), L1424-1426
- https://doi.org/10.1143/jjap.37.l1424
Abstract
Lasing action in an In0.1Ga0.9N vertical cavity surface emitting laser was successfully achieved, for the first time, at a wavelength of 381 nm. The 3λ vertical cavity comprising an In0.1Ga0.9N active region was grown on a GaN/Al0.34Ga0.66N quarter-wave reflector by metal organic chemical vapor deposition (MOCVD), and covered with a TiO2/SiO2 reflector by electron-beam evaporation. The laser was operated at 77 K under optical excitation. We have observed a significant narrowing of the emission spectrum from 2.5 nm below the threshold to 0.1 nm (resolution limit) above the threshold, which is a clear signature of lasing action.Keywords
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