GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector

Abstract

50 layers of GaInAsP/InP heteromultistructure with one quarter-wavelength thickness have been fabricated by computer-controlled rotational LPE. The measured reflectivity of the Bragg reflector was 82% at λ = 1.4 μm. The application of the multilayer as a reflector to a surface-emitting laser is demonstrated and a first GaInAsP/InP surface-emitting laser (λ = 1.4 μm) with a heteromultilayer Bragg reflector has been realised. The pulsed threshold current was 120 mA at 77 K and single-wavelength oscillation has been achieved.