Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
- 19 June 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (25)
- https://doi.org/10.1063/1.2216023
Abstract
No abstract availableKeywords
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