Forward transit delay in In_0.53Ga_0.47As heterojunction bipolar transistors with nonequilibrium electron transport

Publisher Website

1 November 1993

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 40 (11), 2122
https://doi.org/10.1109/16.239798

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
Applied Physics Letters, 1992
Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors
IEEE Electron Device Letters, 1990
Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field
Applied Physics Letters, 1990

Cited by 4 articles