Effects of ambients on oxygen precipitation in silicon
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7), 561-564
- https://doi.org/10.1063/1.91546
Abstract
We have discovered an ambient effect on the precipitation of oxygen in the bulk of silicon wafers. Oxidizing ambients were found to strongly retard the precipitation, in comparison with various inert ambients. The precipitation process was studied by the methods of infrared spectrophotometry, thermal conversion, and transmission electron microscopy. In oxidizing ambients, oxygen precipitates tended to cluster in colonies. A typical colony consisted of a few to tens of precipitates, webbed in a complex of dislocation loops. In contrast, precipitates formed in inert ambients were usually isolated. Two mechanisms are suggested to explain this effect, both involving oxidation‐generated silicon self‐interstitials.Keywords
This publication has 9 references indexed in Scilit:
- Interstitial oxygen gettering in Czochralski silicon wafersApplied Physics Letters, 1977
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957