I n s i t u Schottky contacts to molecular-beam epitaxially grown gallium antimonide
- 1 November 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9), 3988-3990
- https://doi.org/10.1063/1.339201
Abstract
Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo‐ and heteroepitaxial layers of n‐type GaSb grown by molecular‐beam epitaxy. The barrier heights determined from the current‐voltage and capacitance‐voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.Keywords
This publication has 5 references indexed in Scilit:
- The effects of vacuum conditions on epitaxial Al/GaAs contacts formed by molecular-beam epitaxyJournal of Applied Physics, 1986
- A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Electrochemical sulfur doping of GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1981
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Metal-semiconductor surface barriersSolid-State Electronics, 1966