I n s i t u Schottky contacts to molecular-beam epitaxially grown gallium antimonide

Abstract

Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo‐ and heteroepitaxial layers of n‐type GaSb grown by molecular‐beam epitaxy. The barrier heights determined from the current‐voltage and capacitance‐voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.