Arsenic-doped n-type silicon epitaxial films have been grown by molecular beam epitaxial technique, utilizing low energy As+ ion implantation. A convenient acronym for this combination is I2 Si MBE for Ion Implanted SiMolecular Beam Epitaxy. Arsenic ions (As+) accelerated to energies between 400 and 800 eV have shown a high sticking coefficient on a heated silicon surface. Precise control of doping density and profile has been achieved. Growth conditions have been defined at which epitaxial films with bulk characteristics can be grown.