Low Energy Ion Bombardment Effects in SiO2
- 1 January 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (6), 249-255
- https://doi.org/10.1109/tns.1972.4326841
Abstract
Evidence has been presented for the presence of mobile ions in ion bombarded SiO2, these ions being possibly protons or sodium ions. A model invoking neutralization of the incident ion beam at the surface, followed by impurity ion transport to the interface under the influence of the field building up across the SiO2 film during bombardment has been constructed to explain the experimental data.Keywords
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