Abstract
The radial distribution function for amorphous InAs, determined by high-angle x-ray diffraction, is shown to be similar to that of amorphous Ge; thus, the structure of amorphous InAs might be well described by the continuous random-network structures proposed for amorphous Ge. The presence of the odd-membered rings in the random-network structures requires a large fraction (∼ 10%) of the bonds to be between like atoms. Small-angle scattering measurements indicate that amorphous InAs is homogeneous and contains very few voids.