Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous Silicon

Abstract
The observation of a metastable field-induced doping effect which occurs in the bulk of n-type hydrogenated amorphous silicon films at temperatures above 150°C is reported. This effect produces a reversible tenfold change in the net shallow donor concentration and thus is intimately related to the overall doping mechanism of these films.