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Theory of Interstitial Oxygen in Silicon and Germanium
Home
Publications
Theory of Interstitial Oxygen in Silicon and Germanium
Theory of Interstitial Oxygen in Silicon and Germanium
E. Artacho
E. Artacho
FY
F. Yndurain
F. Yndurain
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1 November 1995
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 196-201
,
103-108
https://doi.org/10.4028/www.scientific.net/msf.196-201.103
Abstract
No abstract available
Keywords
OXYGEN IN COVALENT SEMICONDUCTORS
All Related Versions
Version 1, 1995-09-20, ArXiv (Unconfirmed version)
Cited by 4 articles