Rare earth ions in LPE III-V semiconductors
- 2 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3), 741-744
- https://doi.org/10.1016/0022-0248(86)90548-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Preparation and characterization of LPE InPJournal of Crystal Growth, 1981