Epitaxial growth of LiNbO3-LiTaO3 thin films on Al2O3
- 1 October 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (7), 2989-2993
- https://doi.org/10.1063/1.339385
Abstract
Epitaxial thin films of LiNbO3 and LiTaO3 were grown on sapphire substrates by the rf‐magnetron sputtering method. Structural characterization was made by several spectroscopic measurements: x‐ray diffraction, Raman scattering, and optical absorption. We obtained epitaxial thin films with lattice‐mismatched strained layers, without misfit defects which are usually created at the interface. Impurity‐ion (Nd3+ and Cr3+) doped films were also grown; these films had larger refractive indices than the pure films. Furthermore, the heteroepitaxial thin films of up to 10 alternating LiNbO3/LiTaO3 layers were successfully grown, and their periodic structures were studied by optical second‐harmonic generation.Keywords
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