Injected carrier flow in a semi-insulator containing a density gradient of a deep impurity
- 28 February 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (2), 97-107
- https://doi.org/10.1016/0038-1101(67)90026-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Filamentary Injection in Semi-Insulating SiliconJournal of Applied Physics, 1966
- Double-injection experiments in semi-insulating silicon diodesSolid-State Electronics, 1965
- Observation of Double Injection in Long SiliconStructuresPhysical Review B, 1965
- Effects of Diffusion on Double Injection in InsulatorsPhysical Review B, 1965
- POST-BREAKDOWN CONDUCTION IN FORWARD-BIASED P-I-N SILICON DIODESApplied Physics Letters, 1964
- Comparative Anatomy of Models for Double Injection of Electrons and Holes into SolidsJournal of Applied Physics, 1964
- Effect of Shallow Trapping and the Thermal-Equilibrium Recombination Center Occupancy on Double-Injection Currents in InsulatorsPhysical Review B, 1964
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Volume-controlled current injection in insulatorsReports on Progress in Physics, 1964
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956