Effects of recombination on trap-limited dispersive transport
- 30 November 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 40 (5), 535-537
- https://doi.org/10.1016/0038-1098(81)90567-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Optical Studies of Excess Carrier Recombination in-Si: H: Evidence for Dispersive DiffusionPhysical Review Letters, 1980
- Electron drift mobility in hydrogenated a-SiApplied Physics Letters, 1980
- Simulations of the transient photoconductivity in a-SiO2 using a multiple-trap modelJournal of Applied Physics, 1980
- Theory of radiative recombination by diffusion and tunnelling in amorphous Si:HJournal of Non-Crystalline Solids, 1980