Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

Abstract

We presented an alternative design of type II superlattice photodiodes with the insertion of a mid-wavelength infrared M-structure $\mathrm{Al}\mathrm{Sb}∕\mathrm{Ga}\mathrm{Sb}∕\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{Sb}∕\mathrm{Al}\mathrm{Sb}$ superlattice for the reduction of dark current. The M-structure superlattice has a larger carrier effective mass and a greater band discontinuity as compared to the standard type II superlattices at the valence band. It acts as an effective medium that weakens the diffusion and tunneling transport at the depletion region. As a result, a $10.5\mu \mathrm{m}$ cutoff type II superlattice with $500\mathrm{nm}$ M-superlattice barrier exhibited a $R_{0}A$ of $200\Omega {\mathrm{cm}}^2$ at $77\mathrm{K}$ , approximately one order of magnitude higher than the design without the barrier. The quantum efficiency of such structures does not show dependence on either barrier thickness or applied bias.