A Self-Aligned Mo-Silicide Formation

Abstract

Mo-silicides, formed by a new technique combining ion implantation through metal film (ITM) to induce metal/Si interface mixing and also to form doped layers with appropriate subsequent annealings, were found to have excellent properties in film uniformity and self-aligned formation for exposed Si areas (contact holes). These excellent silicidation properties in the ITM technique were also confirmed for patterned poly-Si silicidation. Lateral silicide growth out of contact holes, usually observed in silicidation using mere thermal reaction of refractory-metal/Si structures, was markedly suppressed in the ITM silicidation.