High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (1), 16-18
- https://doi.org/10.1109/55.475563
Abstract
AlAs buffers used to reduce the leakage current of high-temperature GaAs MESFET devices are shown to have no detrimental effect on the microwave performance measured to 200/spl deg/C. The f/sub t/ values decrease with increasing temperature, but do not appear to be influenced by the AlAs buffer. The f/sub max/ values also decrease with increasing temperature; however, they are improved with increasing AlAs buffer thickness due to a concomitant decrease in the device output conductance, At 200/spl deg/C ambient temperature, f/sub t/ and f/sub max/ values of 14.5 GHz and 36.7 GHz, respectively, were measured.Keywords
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