Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Abstract
Fast recovery (2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs‐dielectric mirror interface as compared to that at a GaAs‐AlGaAs interface.