Electrical characteristics of Au/Ti-(n-type) InP Schottky diodes

Abstract

Metal-semiconductor surface barriers have been formed by the vacuum evaporation of Au/Ti on to epitaxially grown films of n-type InP. The current and capacitance of these devices were measured as a function of voltage at several temperatures and analysed in terms of existing theories. The particular contact fabrication process which has been used produces a relatively high (0.53 eV) room-temperature barrier height; the temperature dependence of the barrier height (4.8*10^-4 eV K^-1) is approximately equal to that of the energy gap in InP. The diodes exhibited ideality factors of approximately 1.07 and room-temperature saturation current densities approximately 3*10^-5 A cm^-2.