Like-sign asymmetric dislocations in zinc-blende structure
- 1 September 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (5), 185-186
- https://doi.org/10.1063/1.1654336
Abstract
Symmetry considerations reveal that an asymmetry exists relative to orthogonal 60° dislocations of the same sign in zinc‐blende structure. The effect of this asymmetry has been observed in compositionally graded crystals of In1−xGaxP and GaAs1−xPx grown from vapor phase. It is observed that the spatial arrangement of the two sets of misfit dislocations in an orthogonal array is different. In one 〈110〉 direction, the misfit dislocations tend to be uniformly distributed, while in the other 〈110〉 direction there is a marked tendency for periodic banding of the dislocations.Keywords
This publication has 5 references indexed in Scilit:
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Etch-pit studies of dislocations in indium antimonideJournal of Materials Science, 1966
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- Anisotropic plastic deformation of indium antimonidePhilosophical Magazine, 1962