Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL Cell
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5)
- https://doi.org/10.1143/jjap.19.873
Abstract
Pulse-excited response of the electroluminescence and its concentration dependence of luminescent center have been investigated in order to clarify the electroluminescent mechanism of Au/ZnSe: Mn/n-GaAs heterostructure cell. The best record obtained from ZnSe: Mn phosphor film cell shows 31 mlm/W in luminous efficiency and 230 fL in brightness under the dc excitation condition of 20 V and 10 mA. The relaxation time is estimated from brightness wave forms to be 17.5 µs for Mn-F complex center, while that of Mn2+ ion center varies from 140 to 20 µs with increase of Mn content. The experimental data show that two processes exist of a carrier injection through the interface states and the electron flowing over the heterojunction barrier.Keywords
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