Oxide Spintronics

Abstract

Concomitant with the development of metal-based spintronics in the late 1980s and 1990s, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition-metal oxides and, notably, mixed-valence manganites. The discovery of colossal magnetoresistance in manganite films triggered intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios that are one order of magnitude larger than what had been obtained with transition-metal electrodes. Since then, research on oxide spintronics has been intense, with the latest developments focused on diluted magnetic oxides and, more recently, on multiferroics. In this paper, the most important results on oxide spintronics was reviewed, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronics devices