High-power millimeter wave IMPATT oscillators with both hole and electron drift spaces made by ion implantation

1 July 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (7), 1135-1136
https://doi.org/10.1109/PROC.1970.7861

Abstract

CW powers of 640 mW at 50 GHz have been obtained from double-drift region IMPATT diodes. This result represents the highest product of CW power times frequency squared obtained to date from any IMPATT diode. The diodes are p⁺pnn⁺structures and have both hole and electron drift spaces. The systematic fabrication (by ion implantation) and the evaluation of the dc and millimeter wave characteristics are presented.

Keywords

OSCILLATORS
CHARGE CARRIER PROCESSES
ION IMPLANTATION
DIODES
FABRICATION
CAPACITANCE
BREAKDOWN VOLTAGE
BORON
ANNEALING
MILLIMETER WAVE TECHNOLOGY

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