Measurement of hole velocity in n-type InGaAs
- 4 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18), 1260-1262
- https://doi.org/10.1063/1.97877
Abstract
Hole drift velocities in n‐type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit‐time‐limited InGaAs p‐i‐n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.Keywords
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